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SiC Schottky Barrier Diodes (SBD)
InventChip's SiC SBD products feature zero reverse recovery charge, excellent high-temperature performance, and superior switching characteristics. Ideal for high-frequency rectification and PFC applications requiring high efficiency.
FAE Note: The IV0Z12S060B is perfect for high-frequency totem-pole PFC applications, with its zero reverse recovery eliminating switching losses in hard-switching topologies.
Product Series
| Model | Voltage | Current | VF | Package | Datasheet | Action |
|---|---|---|---|---|---|---|
| IV0Z12S060B | 1200V | 60A | 1.5V | TO-247-2L | Download | |
| IV0Z00650A | 650V | 5A | 1.3V | TO-252 | Download | |
| IV0Z12S040B | 1200V | 40A | 1.5V | TO-247-2L | Download | |
| IV0Z17S020B | 1700V | 20A | 1.6V | TO-247-2L | Download | |
| IV0Z12S010A | 1200V | 10A | 1.4V | TO-252 | Download | |
| IV0Z00700C | 700V | 30A | 1.4V | TO-247-2L | Download |
SiC SBD Advantages
Compared to traditional silicon PN junction diodes, SiC SBDs offer significant advantages:
Technical Advantages
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Zero Reverse Recovery Charge
Eliminate reverse recovery losses, significantly reducing switching losses in high-frequency applications
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Superior Temperature Performance
Maintain stable performance at high temperatures, supporting high-temperature operation
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Low Forward Voltage Drop
Optimized VF characteristics ensure low conduction losses
Application Benefits
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High Efficiency Systems
Achieve system efficiency >99% in PFC applications
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High Power Density
High-frequency operation reduces magnetic component size, improving power density
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Reduced EMI
Soft switching characteristics reduce electromagnetic interference issues
Application Areas
PFC Circuits
Totem-pole PFC topologies
DC-DC Converters
LLC resonant converters
Photovoltaic Inverters
Grid-tie inverters
UPS Systems
High-efficiency UPS