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SiC MOSFET
InventChip's SiC MOSFET products adopt advanced Gen 2 technology, featuring high voltage tolerance, low conduction resistance, and excellent switching characteristics. Widely used in electric vehicles, charging stations, photovoltaic energy storage, and industrial power supplies.
FAE Note: IV1Q12080T4 is the preferred device for 800V EV charging systems, with its 80mΩ low on-resistance and high-speed switching characteristics achieving >99% efficiency in PFC stages.
Product Series
| Model | Voltage | Current | RDS(on) | Package | Datasheet | Action |
|---|---|---|---|---|---|---|
| IV1Q12080T4 | 1200V | 40A | 80mΩ | TO-247-4L | Download | |
| IV1Q12055T4 | 1200V | 55A | 55mΩ | TO-247-4L | Download | |
| IV0Q00650D7 | 650V | 30A | 70mΩ | TO-247-3L | Download | |
| IV1Q170080T4 | 1700V | 20A | 80mΩ | TO-247-4L | Download | |
| IV1Q00650D7 | 650V | 30A | 70mΩ | TO-247-3L | Download | |
| IV1Q12035T4 | 1200V | 75A | 35mΩ | TO-247-4L | Download |
SiC MOSFET Advantages
Compared to traditional silicon devices, SiC MOSFETs offer significant advantages:
High Efficiency
Lower conduction and switching losses, higher system efficiency
High Temperature Operation
Superior high-temperature characteristics, simplified thermal design
High Frequency Operation
Enable high-frequency switching, reduce magnetic component size
High Power Density
Higher power density, compact system design